Investigation of Electronic Properties of SbSeI Under High Pressure byFirst Principles Calculations

dc.contributor.authorÖzer, Tahsin
dc.date.accessioned2025-08-12T08:05:50Z
dc.date.issued2021
dc.departmentOsmaniye Korkut Ata Üniversitesi
dc.description.abstractThe structural parameters, electronic structure, and charge density distribution of SbSeI compound under hydrostatic pressure of 0-200 kBar were investigated for the first time. Quantum Espresso software (QE) was used for all calculations. Electronic band calculations have shown that SbSeI has direct / indirect forbidden band gap in the 0-200 kBar pressure range.
dc.identifier.doi10.7240/jeps.717399
dc.identifier.endpage72
dc.identifier.issn2636-8277
dc.identifier.issue1
dc.identifier.startpage64
dc.identifier.trdizinid452830
dc.identifier.urihttps://doi.org/10.7240/jeps.717399
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/452830
dc.identifier.urihttps://hdl.handle.net/20.500.12502/2086
dc.identifier.volume33
dc.indekslendigikaynakTR-Dizin
dc.institutionauthorÖzer, Tahsin
dc.language.isoen
dc.relation.ispartofInternational journal of advances in engineering and pure sciences (Online)
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanı
dc.rightsinfo:eu-repo/semantics/openAccess
dc.snmzKA_TR_20250812
dc.subjectFizik
dc.subjectAtomik ve Moleküler Kimya
dc.subjectFizikokimya
dc.titleInvestigation of Electronic Properties of SbSeI Under High Pressure byFirst Principles Calculations
dc.typeArticle

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